Semiconductor Devices
Telangana Board · Class 12 · Physics
Practice quiz for Semiconductor Devices — Telangana Board Class 12 Physics. MCQs and questions with answers to test your preparation.
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Quick Quiz: Semiconductor Devices
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What is the energy gap of silicon at room temperature?
The knee voltage of a silicon diode in forward bias is approximately:
A half-wave rectifier circuit uses a transformer with secondary voltage of 20 V (RMS). Calculate the peak inverse voltage (PIV) across the diode.
In a common emitter transistor configuration, if the base current is 50 μA and current gain β = 100, what is the collector current?
Sample Questions
Which of the following are characteristics of n-type semiconductors?
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Doped with pentavalent atoms, Electrons are majority carriers, Contains donor impurities
N-type semiconductors are formed by doping pure silicon or germanium with pentavalent atoms (like phosphorus, arsenic) which act as donor impurities. These atoms provide extra electrons, making electrons the majority carriers.
Which of the following statements about depletion region in a p-n junction are correct?
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It contains no mobile charge carriers, It widens under reverse bias, It narrows under forward bias, It acts as an insulator
The depletion region is formed by fixed ions and contains no mobile carriers. It widens under reverse bias and narrows under forward bias. It acts as an insulator due to absence of mobile carriers.
The Boolean expression for NAND gate is:
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Y = A̅·B̅
NAND gate is NOT-AND, which means it first performs AND operation (A·B) and then inverts the result. Therefore, Y = A̅·B̅ (NOT of A AND B).
A Zener diode with breakdown voltage 6 V is used in a voltage regulator circuit. If the input voltage varies from 10 V to 15 V, what will be the output voltage?
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Remains constant at 6 V
A Zener diode in reverse bias maintains a constant voltage across it equal to its breakdown voltage (6 V) when the input voltage is greater than this value. This property is used for voltage regulation.
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