Semiconductors — Practice Quiz
Maharashtra Board · Class 11 · Physics
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What is the electrical conductivity of silicon at room temperature?
What is the band gap energy of germanium at 300 K?
A pure Si crystal has 4 × 10²⁸ atoms m⁻³. It is doped with 1 ppm concentration of phosphorus. Given nᵢ = 1.2 × 10¹⁶ m⁻³, calculate the number of holes per m³.
In a forward biased p-n junction, the width of the depletion region:
Sample Questions
Which of the following are characteristics of n-type semiconductors?
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Doped with pentavalent impurities, Electrons are majority carriers, Donor atoms become positively charged
N-type semiconductors are created by doping with pentavalent impurities (donors) like phosphorus or arsenic. These donate free electrons, making electrons the majority carriers. The donor atoms lose electrons and become positively charged ions.
Which of the following statements about intrinsic semiconductors are correct?
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nₑ = nₕ, Pure semiconductor material, Conductivity increases with temperature, Silicon and germanium are examples
Intrinsic semiconductors are pure materials like silicon and germanium with no impurities. They have equal numbers of electrons and holes (nₑ = nₕ), and their conductivity increases with temperature due to thermal generation of charge carriers.
What is the knee voltage for a silicon diode?
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0.7 V
The knee voltage is the forward bias voltage at which current through the diode starts rising sharply. For silicon diodes, this occurs at approximately 0.7 V, while for germanium diodes it is about 0.3 V.
The electrical conductivity of a semiconductor is given by σ = nqμ. If a semiconductor has electron density 10²⁰ m⁻³ and hole density 10¹⁸ m⁻³, with electron mobility 0.1 m²V⁻¹s⁻¹ and hole mobility 0.05 m²V⁻¹s⁻¹, calculate the total conductivity.
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1.68 S m⁻¹
Step 1: σ = σₑ + σₕ = nₑeμₑ + nₚeμₚ. Step 2: σₑ = 10²⁰ × 1.6×10⁻¹⁹ × 0.1 = 1.6 S m⁻¹. Step 3: σₕ = 10¹⁸ × 1.6×10⁻¹⁹ × 0.05 = 0.08 S m⁻¹. Step 4: Total σ = 1.6 + 0.08 = 1.68 S m⁻¹
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