Junction Transistors
ICSE · Class 12 · Physics
Summary of Junction Transistors for ICSE Class 12 Physics. Key concepts, important points, and chapter overview.
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Overview
A transistor is a device consisting of two p-n junctions and it replaces the vacuum triode valve. It was invented in 1948 by Bardeen, Shockley and Barattain in USA. A junction transistor is a three-element semiconductor device formed by sandwiching a thin layer of doped semiconductor between two thi
Key Concepts
A p
A p-n-p transistor has a thin n-type base between two p-type regions called emitter and collector. An n-p-n transistor has a thin p-type base between
The emitter supplies majority carriers
The emitter supplies majority carriers, the base controls their passage, and the collector collects most of the carriers that cross the base.
In a p
In a p-n-p transistor, the emitter is positive and the collector is negative with respect to the base. The emitter-base junction is forward biased and
In an n
In an n-p-n transistor, the emitter is negative and the collector is positive with respect to the base. The emitter-base junction is forward biased an
In a p
In a p-n-p transistor, holes are the charge carriers inside the transistor and electrons are the charge carriers in the external circuit. In an n-p-n
Learning Objectives
- Understand the construction and types of junction transistors.
- Distinguish between p-n-p and n-p-n transistors.
- Explain transistor action in terms of charge carrier flow and junction biasing.
- Use the current relation I_E = I_B + I_C correctly.
- Define alpha, beta, input resistance, output resistance, and transconductance.
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