Semiconductor Electronics

Electron capacity of a band = 2(2l+1)N

1s, 2s, 2p, 3s bands can hold 2N, 2N, 6N, 2N electrons respectively

This energy gap is denoted by E_g

Conductivity of semiconductor: σ = e(neμe + nhμh)

Intrinsic carrier concentration: ne = nh = ni

Temperature dependence of intrinsic carrier density: ni ∝ e^(-εg / 2kT)

ne = nh = ni

ni ∝ e^(-εg / 2kT)

σ = e(neμe + nhμh)

Law of mass action: ne nh = ni^2

n-type approximation: ne ≈ Nd >> nh

p-type approximation: nh ≈ Na >> ne

Donor level energy below conduction band: 0.01 eV in Ge, 0.05 eV in Si

Acceptor level energy above valence band: 0.01 eV in Ge, 0.05 eV in Si