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Chapter 12 of 14
NCERT Solutions

Semiconductor Electronics: Materials, Devices and Simple Circuits — NCERT Solutions

CBSE · Class 12 · Physics

NCERT Solutions for Semiconductor Electronics: Materials, Devices and Simple Circuits, CBSE Class 12 Physics: 6 textbook questions solved step by step.

105 questions60 flashcards9 formulas & key relations5 concepts

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A graph showing the current (I) versus voltage (V) characteristics of a p-n junction diode. Include both forward bias (exponential increase after knee voltage) and reverse bias (small reverse saturati
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Exercises

14.1In an n-type silicon, which of the following statement is true:
  • (a) Electrons are majority carriers and trivalent atoms are the dopants.
  • (b) Electrons are minority carriers and pentavalent atoms are the dopants.
  • (c) Holes are minority carriers and pentavalent atoms are the dopants.
  • (d) Holes are majority carriers and trivalent atoms are the dopants.
Show solution

In an n-type semiconductor, the dopant is pentavalent and the majority carriers are electrons. Therefore, holes are minority carriers. So the correct statement is (c).

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14.2Which of the statements given in Exercise 14.1 is true for p-type semiconductors.Show solution

In a p-type semiconductor, the dopant is trivalent and the majority carriers are holes. Hence the correct statement is (d).

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14.3Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated

by energy band gap respectively equal to (Eg)C(E_g)_C, (Eg)Si(E_g)_{Si} and (Eg)Ge(E_g)_{Ge}. Which of the following statements is true?

  • - (a) (Eg)Si<(Eg)Ge<(Eg)C(E_g)_{Si} < (E_g)_{Ge} < (E_g)_C
  • - (b) (Eg)C<(Eg)Ge>(Eg)Si(E_g)_C < (E_g)_{Ge} > (E_g)_{Si}
  • - (c) (Eg)C>(Eg)Si>(Eg)Ge(E_g)_C > (E_g)_{Si} > (E_g)_{Ge}
  • - (d) (Eg)C=(Eg)Si=(Eg)Ge(E_g)_C = (E_g)_{Si} = (E_g)_{Ge}
Show solution

From the chapter, the energy gaps are given as:

  • Carbon (diamond): 5.4 eV5.4\,\text{eV}
  • Silicon: 1.1 eV1.1\,\text{eV}
  • Germanium: 0.7 eV0.7\,\text{eV}

So the order is

(Eg)C>(Eg)Si>(Eg)Ge (E_g)_C > (E_g)_{Si} > (E_g)_{Ge}

Hence, the correct statement is option (c).

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14.4In an unbiased p-n junction, holes diffuse from the p-region to n-region because
  • - (a) free electrons in the n-region attract them.
  • - (b) they move across the junction by the potential difference.
  • - (c) hole concentration in p-region is more as compared to n-region.
  • - (d) All the above.

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14.5When a forward bias is applied to a p-n junction, it
  • - (a) raises the potential barrier.
  • - (b) reduces the majority carrier current to zero.
  • - (c) lowers the potential barrier.
  • - (d) None of the above.

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14.6In half-wave rectification, what is the output frequency if the input frequency is 50 Hz. What is the output frequency of a full-wave rectifier for the same input frequency.

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Frequently Asked Questions

What are the important topics in Semiconductor Electronics: Materials, Devices and Simple Circuits for CBSE Class 12 Physics?
Key topics in Semiconductor Electronics: Materials, Devices and Simple Circuits include Classification of Solids and Semiconductor Types, Intrinsic Semiconductor and Charge Carriers, Extrinsic Semiconductor and Doping, p-n Junction Formation and Depletion Region. Study these first, then practise questions on each for the CBSE Class 12 board exam.
Are these NCERT Solutions for Semiconductor Electronics: Materials, Devices and Simple Circuits free?
The first 3 of the 6 solutions on this page are open to read. The other 3 are free with a Super Tutor account — signing up is free and needs no card.
How should I revise Semiconductor Electronics: Materials, Devices and Simple Circuits for the CBSE Class 12 board exam?
Learn the core ideas first, then work through the 105 practice questions on Semiconductor Electronics: Materials, Devices and Simple Circuits. Revise definitions regularly and use flashcards for quick recall before the exam.

Sources & Official References

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