Junction Diodes — Flashcards

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A p-n junction diode is a basic semiconductor device formed by joining p-type and n-type semiconductor regions. The boundary between them is called the p-n junction.

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An aluminium film is diffused into an n-type wafer at about 600°C. This creates a p-type region on the n-type semiconductor. Growing and alloying methods are also used to form p-n junctions.

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The depletion region is the small region near the p-n junction that is depleted of mobile charge carriers and contains only immobile ions. Its width is of the order of 10^-6 m.

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The potential barrier is the potential difference developed across the depletion region. It is about 0.3 V for germanium p-n junction and about 0.7 V for silicon p-n junction.

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Given: V = 0.7 V, d = 10^-6 m Formula: E = V/d Step 1: E = 0.7 V / 10^-6 m Step 2: E = 0.7 × 10^6 V/m Step 3: E = 7 × 10^5 V/m Answer: 7 × 10^5 V/m…

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V = (kT/e) log_e (N_A·N_D / n_i^2) Here k is Boltzmann constant, T is temperature, e is electron charge, N_A is number of acceptor negative ions, N_D is number of donor positive ions, and n_i is intri…

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Majority carriers diffuse across the junction because of concentration difference. Holes move from the p-region to the n-region, so the diffusion current is directed from p-block to n-block.

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Minority carriers move under the junction field. Electrons drift from p-block to n-block and holes drift from n-block to p-block, so the drift current is directed from n-block to p-block, opposite to …