Semiconductor Devices

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The resistivity of semiconductors lies between \(10^{-5} \, \Omega\mathrm{m}\) and \(10^{6} \, \Omega\mathrm{m}\). This is higher than metals but lower than insulators.

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n-type semiconductor is formed by doping a pure semiconductor (like Si or Ge) with a pentavalent impurity (like P, As). It has electrons as majority carriers. p-type semiconductor is formed by doping …

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Conductivity \( \sigma = rac{1}{ ho} \) Step 1: \( ho = 2 imes 10^3 \, \Omega\mathrm{m} \) Step 2: \( \sigma = rac{1}{2 imes 10^3} = 5 imes 10^{-4} \, \mathrm{S/m} \) Answer: \( 5 imes 10^{-4} …

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When a p-type and n-type semiconductor are joined, electrons from the n-side diffuse into the p-side and recombine with holes. This creates a narrow region near the junction depleted of mobile charge …

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The barrier potential is approximately 0.7 V for silicon and 0.3 V for germanium at room temperature. This potential opposes the diffusion of majority carriers across the junction.

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No, the diode will not conduct significantly. The applied voltage (0.5 V) is less than the knee voltage (0.7 V), so it cannot overcome the barrier potential. Hence, very little current flows.

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The width of the depletion region decreases. Forward bias reduces the potential barrier, allowing majority carriers to cross the junction more easily, thus reducing the space-charge region.

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It is the small current that flows under reverse bias due to minority carriers (electrons in p-region and holes in n-region). It is nearly constant and independent of reverse voltage until breakdown.